IPD60R180P7S The Infineon Technologies IPD60R180P7S is a 600V CoolMOS P7 series N-channel power MOSFET. It features a maximum drain-source voltage of 650V and a typical gate charge of 25 nC.
Mfr Part #:

IPD60R180P7S

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies IPD60R180P7S is a 600V CoolMOS P7 series N-channel power MOSFET. It features a maximum drain-source voltage of 650V and a typical gate charge of 25 nC.
Total Stock: 13,074 pcs
$ Price Range: $1.67

IPD60R180P7S Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,370 pcs
7370 pcs On Request 1 On Request On Request 2Y+ On Request On Request
Non-Authorised Inventory information
5,704 pcs
5704 pcs On Request 1 On Request On Request On Request On Request On Request

IPD60R180P7S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Gate Charge
Industrial Grade
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Storage Temperature
Tape & Reel

IPD60R180P7S Description

Short technical summary and product information.

The Infineon Technologies IPD60R180P7S is a 600V CoolMOS P7 series N-channel power MOSFET designed for high voltage power applications. This device combines the benefits of a fast-switching Superjunction (SJ) MOSFET with excellent ease of use, including very low ringing tendency and outstanding body diode robustness.

 

Key electrical specifications include a maximum drain-source voltage of 650V, a maximum on-resistance of 180 mΩ, and a typical gate charge of 25 nC. It also offers a pulsed drain current of 53A and excellent ESD robustness exceeding 2kV (HBM).

 

The MOSFET is suitable for hard and soft switching applications such as PFC and LLC stages due to its commutation ruggedness. It is packaged in a PG-TO252-3 surface mount package, facilitating efficient thermal management and increased power density solutions.

 

Potential applications include PFC stages, hard-switching PWM stages, and resonant switching stages for products like PC Silverbox, adapters, LCD & PDP TVs, lighting, servers, telecom, and UPS.

IPD60R180P7S Quick Information

Product Type: MOSFET
Series: CoolMOS P7
Canonical Name: IPD60R180P7S 600V CoolMOS P7 Power MOSFET
Subcategory: Power MOSFET

IPD60R180P7S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD60R180P7S Estimated Pricing

Qty Low High
1+ $1.67 $1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD60R180P7S Features

  • 600V CoolMOS P7 series N-channel MOSFET.
  • Maximum drain-source voltage 650V.
  • Maximum on-resistance 180 mΩ.
  • Typical gate charge 25 nC.
  • PG-TO252-3 surface mount package.

IPD60R180P7S Applications

  • Suitable for PFC and LLC stages.
  • Used in hard-switching PWM stages.
  • Ideal for resonant switching stages.
  • Applications include adapters and servers.
  • Designed for telecom and UPS systems.

IPD60R180P7S FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IPD60R180P7S?

The maximum drain-source voltage (VDS) at Tj,max is 650V.

What is the maximum on-resistance of the IPD60R180P7S MOSFET?

The maximum on-resistance (RDS(on)) is 180 mΩ.

What is the typical gate charge for this MOSFET?

The typical gate charge (Qg) is 25 nC.

What package type is the IPD60R180P7S available in?

The IPD60R180P7S is available in the PG-TO252-3 package.

What is the RoHS status of the IPD60R180P7S?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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