| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,500 pcs
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4500 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Infineon IPP032N06N3G is a high-performance N-Channel Power MOSFET designed for various applications. It features a breakdown voltage of 60V and a continuous drain current rating of 120A, with a pulsed drain current capability of up to 480A.
This MOSFET exhibits a low drain-source on-resistance of 0.0032 ohms at maximum, contributing to efficient power handling with a maximum power dissipation of 188W. The operating temperature range extends up to 175°C, making it suitable for demanding environments. The component utilizes Metal-Oxide Semiconductor FET technology and operates in enhancement mode.
Packaged in a TO-220AB configuration with flange mount, the IPP032N06N3G is designed for through-hole mounting. It has 3 terminals and a plastic/epoxy body. The terminal finish is Tin (Sn). Environmental compliance includes RoHS 3 compliance and MSL Level 1.
Key specifications include a 60V minimum breakdown voltage, 120A maximum drain current, and 0.0032 ohm maximum drain-source on-resistance. It is configured as a single element with a built-in diode.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 60V.
The IPP032N06N3G is available in a TO-220AB flange mount package.
The maximum operating temperature is 175°C.
The maximum drain current is 120A.
The drain-source on-resistance is 0.0032 ohms.
The maximum power dissipation is 188W.
The avalanche energy rating is 235 mJ.
Yes, it has a single configuration with a built-in drain-source diode.