IPP032N06N3G The Infineon IPP032N06N3G is an N-Channel Power Field-Effect Transistor. It offers a 60V breakdown voltage and a 120A maximum drain current.
Mfr Part #:

IPP032N06N3G

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPP032N06N3G is an N-Channel Power Field-Effect Transistor. It offers a 60V breakdown voltage and a 120A maximum drain current.
✓ Total Stock: 4,550 pcs
$ Price Range: $2.93

IPP032N06N3G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,500 pcs
4500 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
50 pcs
50 pcs On Request 1 On Request On Request On Request On Request On Request

IPP032N06N3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
SVHC Present
Tape & Reel

IPP032N06N3G Description

Short technical summary and product information.

The Infineon IPP032N06N3G is a high-performance N-Channel Power MOSFET designed for various applications. It features a breakdown voltage of 60V and a continuous drain current rating of 120A, with a pulsed drain current capability of up to 480A.

 

This MOSFET exhibits a low drain-source on-resistance of 0.0032 ohms at maximum, contributing to efficient power handling with a maximum power dissipation of 188W. The operating temperature range extends up to 175°C, making it suitable for demanding environments. The component utilizes Metal-Oxide Semiconductor FET technology and operates in enhancement mode.

 

Packaged in a TO-220AB configuration with flange mount, the IPP032N06N3G is designed for through-hole mounting. It has 3 terminals and a plastic/epoxy body. The terminal finish is Tin (Sn). Environmental compliance includes RoHS 3 compliance and MSL Level 1.

 

Key specifications include a 60V minimum breakdown voltage, 120A maximum drain current, and 0.0032 ohm maximum drain-source on-resistance. It is configured as a single element with a built-in diode.

IPP032N06N3G Quick Information

Product Type: Power Field-Effect Transistor
Series: OptiMOS
Canonical Name: Infineon IPP032N06N3G N-Channel Power MOSFET
Subcategory: N-Channel

IPP032N06N3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPP032N06N3G Estimated Pricing

Qty Low High
1+ $2.93 $2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPP032N06N3G Features

  • 60V minimum breakdown voltage.
  • 120A maximum continuous drain current.
  • 0.0032 ohm maximum on-resistance.
  • TO-220AB package for through-hole mounting.
  • Operates up to 175°C.

IPP032N06N3G Applications

  • Suitable for power switching circuits.
  • Used in high-current applications.
  • Ideal for industrial power supplies.
  • Effective in motor control systems.

IPP032N06N3G FAQs

8 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the IPP032N06N3G?

The breakdown voltage is 60V.

What package is the IPP032N06N3G available in?

The IPP032N06N3G is available in a TO-220AB flange mount package.

What is the maximum operating temperature of the IPP032N06N3G?

The maximum operating temperature is 175°C.

What is the maximum drain current of the IPP032N06N3G?

The maximum drain current is 120A.

What is the drain-source on-resistance of the IPP032N06N3G?

The drain-source on-resistance is 0.0032 ohms.

What is the maximum power dissipation?

The maximum power dissipation is 188W.

What is the avalanche energy rating?

The avalanche energy rating is 235 mJ.

Does the IPP032N06N3G have a built-in diode?

Yes, it has a single configuration with a built-in drain-source diode.

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