IPP023N10N5 The Infineon IPP023N10N5 is an N-channel MOSFET designed for high-frequency switching and synchronous rectification. It offers a 100V drain-source voltage and a maximum continuous drain current of 120A.
Mfr Part #:

IPP023N10N5

Available from 4 distributors
Mfr Name: Infineon
Infineon
The Infineon IPP023N10N5 is an N-channel MOSFET designed for high-frequency switching and synchronous rectification. It offers a 100V drain-source voltage and a maximum continuous drain current of 120A.
✓ Total Stock: 18,877 pcs
$ Price Range: $0.71

IPP023N10N5 Available from 4 distributors

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10,000 pcs
10000 pcs On Request 1 On Request On Request On Request On Request On Request
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3,421 pcs
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3,249 pcs
3249 pcs On Request 1 On Request On Request 21+ On Request On Request
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2,207 pcs
2207 pcs On Request 1 On Request On Request 21+ On Request On Request

IPP023N10N5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Power Dissipation

IPP023N10N5 Description

Short technical summary and product information.

The Infineon IPP023N10N5 is a high-performance N-channel Power MOSFET from the OptiMOSTM5 family. It features a drain-source voltage rating of 100V and a continuous drain current capability of 120A at 25°C.

 

This MOSFET is optimized for low on-resistance, with a maximum RDS(on) of 2.3 mΩ at a gate-source voltage of 10V and a drain current of 80A. It supports a wide operating temperature range from -55°C to 175°C, making it suitable for demanding applications.

 

The device is housed in a PG-TO220-3 package and is designed for through-hole mounting. It is lead-free and RoHS compliant, aligning with environmental standards.

 

Key electrical characteristics include a gate-source voltage range of -20V to +20V and a power dissipation of 375W at 25°C. Its optimized FOMOSS makes it ideal for high-frequency switching applications and synchronous rectification.

IPP023N10N5 Quick Information

Product Type: MOSFET
Series: OptiMOSTM5
Canonical Name: Infineon IPP023N10N5 N-Channel MOSFET
Subcategory: N-Channel

IPP023N10N5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

IPP023N10N5 Estimated Pricing

Qty Low High
1+ $0.71 $0.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPP023N10N5 Features

  • 100V drain-source voltage rating.
  • 120A maximum continuous drain current.
  • Low 2.3 mOhm on-resistance.
  • Wide -55°C to 175°C operating temperature.
  • RoHS compliant and lead-free.

IPP023N10N5 Applications

  • Ideal for high-frequency switching.
  • Suitable for synchronous rectification.
  • Power supply circuit applications.
  • Motor control applications.

IPP023N10N5 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the Infineon IPP023N10N5?

The maximum drain-source voltage (VDS) for the Infineon IPP023N10N5 is 100V.

What is the maximum continuous drain current of the IPP023N10N5?

The maximum continuous drain current (ID) for the Infineon IPP023N10N5 is 120A at 25°C.

What is the typical on-resistance (RDS(on)) for this MOSFET?

The maximum on-resistance (RDS(on)) for the Infineon IPP023N10N5 is 2.3 mΩ at VGS = 10V and ID = 80A.

What is the operating temperature range for the IPP023N10N5?

The operating and storage temperature range for the Infineon IPP023N10N5 is from -55°C to 175°C.

What package type is the Infineon IPP023N10N5 supplied in?

The Infineon IPP023N10N5 is supplied in the PG-TO220-3 package.

Is the Infineon IPP023N10N5 RoHS compliant?

Yes, the Infineon IPP023N10N5 is RoHS3 compliant.

IPP023N10N5 Alternate Parts

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Infineon Technologies
The Infineon Technologies IPP023N10N5 is an N-channel MOSFET designed for high-frequency switching and synchronous rectification. It offers low on-resistance and a high operating temperature.
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