| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,264 pcs
|
1264 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Power Dissipation |
The Infineon Technologies IPP023N10N5 is an N-channel MOSFET belonging to the OptiMOSTM5 family. It is designed with standard level gate requirements and optimized for FOMOSS, providing a very low on-resistance of 2.3 mΩ at a continuous drain current of 120 A.
This power transistor features a maximum drain-source voltage of 100 V and can operate at temperatures up to 175°C. Its robust design makes it suitable for high-frequency switching applications and synchronous rectification. The device is available in a PG-TO220-3 package.
Key electrical characteristics include a maximum continuous drain current of 120 A at 25°C case temperature and 120 A at 100°C case temperature. The pulsed drain current can reach up to 480 A, with a single pulse avalanche energy of 1166 mJ. The gate-source voltage rating is ±20 V.
The IPP023N10N5 is RoHS compliant and lead-free, making it suitable for modern electronic designs requiring high performance and reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100 V.
The maximum on-resistance is 2.3 mΩ when VGS is 10 V and ID is 120 A.
The continuous drain current is 120 A at 25°C and 120 A at 100°C case temperature.
The maximum operating and storage temperature is 175°C.
The IPP023N10N5 is supplied in a PG-TO220-3 package.
Yes, the IPP023N10N5 is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.