| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,000 pcs
|
11000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Mounting Type |
The Infineon IPL60R185C7 is a high-performance N-channel Power MOSFET utilizing the CoolMOS C7 technology. Designed for high voltage applications, this transistor operates at up to 600V with a maximum on-resistance of 185mΩ. It features a typical gate charge of 24nC and can handle a pulsed drain current of 45A.
This MOSFET is suitable for hard and soft switching applications, including PFC and high-performance LLC stages. Its design prioritizes increased efficiency through a low Figure of Merit (FOM) and offers a low parasitic inductance in its SMD PG-VSON-4 package for easier device control. The 4-pin Kelvin source concept further enhances performance.
Potential applications include SMPS for computing, servers, telecom, UPS, and solar systems. The device is qualified for industrial-grade applications according to JEDEC standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.20 | $3.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) at Tj,max is 650V.
The maximum On-Resistance (RDS(on)) is 185mΩ.
The typical Gate Charge (Qg) is 24nC.
The package type is PG-VSON-4.
The RoHS status is RoHS3 Compliant, and the REACH status is REACH Unaffected.