IPG20N04S4-12 The Infineon IPG20N04S4-12 is a dual N-channel Power MOSFET designed for automotive and load switching applications. It offers a 40V drain-source breakdown voltage and 20A continuous drain current.
Mfr Part #:

IPG20N04S4-12

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPG20N04S4-12 is a dual N-channel Power MOSFET designed for automotive and load switching applications. It offers a 40V drain-source breakdown voltage and 20A continuous drain current.
✓ Total Stock: 6,060 pcs
$ Price Range: $2.93

IPG20N04S4-12 Available from 3 distributors

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✓ Non-Authorised
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900 pcs
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IPG20N04S4-12 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Reverse Recovery Time

IPG20N04S4-12 Description

Short technical summary and product information.

The Infineon IPG20N04S4-12 is a dual N-channel, normal level, enhancement mode Power MOSFET from the OptiMOS™-T2 family. It is AEC Q101 qualified and designed for automotive and small load switching applications.

 

Key electrical characteristics include a drain-source breakdown voltage of 40V and a continuous drain current of 20A at 25°C case temperature. The device features a low on-state resistance, with a typical RDS(on) of 11.1 mΩ at VGS=10V and ID=17A. Dynamic characteristics such as input capacitance (Ciss) are typically 1130pF, output capacitance (Coss) at 300pF, and reverse transfer capacitance (Crss) at 9pF.

 

This MOSFET operates at temperatures ranging from -55°C to +175°C. It is packaged in a PG-TDSON-8 surface mount package. The device is also 100% avalanche tested and RoHS compliant.

 

With its robust features and qualification, the IPG20N04S4-12 is suitable for various power management tasks in automotive systems and other demanding applications requiring efficient switching.

IPG20N04S4-12 Quick Information

Product Type: N-Channel Power MOSFET
Series: OptiMOS™-T2
Canonical Name: Infineon IPG20N04S4-12 N-Channel Power MOSFET
Subcategory: N-Channel

IPG20N04S4-12 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPG20N04S4-12 Estimated Pricing

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1+ $2.93 $2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPG20N04S4-12 Features

  • Dual N-channel enhancement mode MOSFET.
  • AEC Q101 qualified for automotive use.
  • 40V drain-source breakdown voltage.
  • 20A continuous drain current.
  • Low on-state resistance.

IPG20N04S4-12 Applications

  • Automotive load switching.
  • Small load switching applications.
  • Power management tasks.
  • Efficient power conversion.

IPG20N04S4-12 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPG20N04S4-12?

The minimum drain-source breakdown voltage is 40V.

What is the continuous drain current rating?

The maximum continuous drain current is 20A at TC=25°C with VGS=10V.

What is the on-resistance of the IPG20N04S4-12?

The maximum on-resistance is 12.2mΩ at VGS=10V and ID=17A.

What is the gate threshold voltage range?

The gate threshold voltage is 2V minimum, 3V typical, and 4V maximum at VDS=VGS and ID=15µA.

What package does the IPG20N04S4-12 come in?

The device is packaged in a PG-TDSON-8 surface mount package.

What is the operating temperature range?

The junction and storage temperature range is -55°C to +175°C.

What are the switching speeds of the IPG20N04S4-12?

Typical switching times: turn-on delay 9ns, rise time 2ns, turn-off delay 10ns, fall time 8ns.

IPG20N04S4-12 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
IPG20N04S4L-11
IPG20N04S4L-11
Infineon
The Infineon IPG20N04S4L-11 is a dual N-channel OptiMOS™-T2 Power-Transistor designed for automotive applications. It features a 40V drain-source breakdown voltage and a maximum continuous drain current of 20A.
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