| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
3,196 pcs
|
3196 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPG20N04S4L-11 is an OptiMOS™-T2 Power-Transistor, specifically a dual N-channel logic-level enhancement mode MOSFET. It is AEC Q101 qualified and rated for an operating temperature of 175°C.
Key electrical specifications include a drain-source breakdown voltage of 40V and a continuous drain current of 20A at 25°C case temperature. The drain-source on-state resistance (Rds(on)) is as low as 10.1mΩ typical at VGS=10V and ID=17A. Dynamic characteristics include input capacitance (Ciss) up to 1990pF and gate charge (Qg) up to 26nC.
This device is supplied in a PG-TDSON-8 package, suitable for surface mounting. It is designed for automotive load switching applications, offering robust performance and high efficiency. The transistor is 100% avalanche tested and is RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (VDS(BR)) is 40V.
The typical gate threshold voltage (VGS(th)) is 1.7V.
The maximum continuous drain current (ID) is 20A.
The typical drain-source on-state resistance (Rds(on)) at VGS=10V and ID=17A is 10.1mΩ.
The operating and storage temperature range is -55°C to +175°C.
The IPG20N04S4L-11 is supplied in a PG-TDSON-8 package.
Yes, the IPG20N04S4L-11 is AEC Q101 qualified.