| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,124 pcs
|
1124 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Power Dissipation | |
| Reverse Recovery Time |
The Infineon IPG20N04S4-08 is a dual N-channel enhancement mode MOSFET from the OptiMOS™-T2 series. It is AEC Q101 qualified and designed for automotive load switching applications.
Key electrical specifications include a drain-source breakdown voltage of 40V and a maximum drain-source on-state resistance of 7.6 mΩ at VGS=10V and ID=17A. The continuous drain current is rated at 20A at 25°C case temperature.
This MOSFET features a maximum operating temperature of 175°C and a junction-to-case thermal resistance of 2.3 K/W. It is supplied in a PG-TDSON-8 package suitable for surface mounting.
The device is 100% avalanche tested and meets RoHS compliance. It is also qualified for MSL1 up to 260°C peak reflow.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The maximum on-state resistance is 7.6 mΩ at VGS=10V and ID=17A.
The continuous drain current is 20A at 25°C case temperature and 20A at 100°C case temperature.
The operating and storage temperature range is -55°C to +175°C.
It is supplied in a PG-TDSON-8 package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
