IPG20N04S4L-07 The Infineon IPG20N04S4L-07 is a dual N-channel OptiMOS™-T2 power MOSFET designed for automotive applications. It offers a 40V drain-source breakdown voltage and a continuous drain current of 20A.
Mfr Part #:

IPG20N04S4L-07

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPG20N04S4L-07 is a dual N-channel OptiMOS™-T2 power MOSFET designed for automotive applications. It offers a 40V drain-source breakdown voltage and a continuous drain current of 20A.
✓ Total Stock: 19,296 pcs
$ Price Range: $1.67

IPG20N04S4L-07 Available from 3 distributors

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✓ Non-Authorised
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14,050 pcs
14050 pcs On Request 1 On Request On Request 17+ On Request On Request
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2,665 pcs
2665 pcs On Request 1 On Request On Request 20+ On Request On Request
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IPG20N04S4L-07 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Mounting Type
Operating Temperature
Power Dissipation
Reverse Recovery Time
Storage Temperature

IPG20N04S4L-07 Description

Short technical summary and product information.

The Infineon IPG20N04S4L-07 is a high-performance dual N-channel Power MOSFET from the OptiMOS™-T2 family, specifically qualified for automotive applications (AEC Q101). This enhancement-mode, logic-level device features a drain-source breakdown voltage of 40V and can handle a continuous drain current of 20A at 25°C case temperature.

 

Key electrical characteristics include a low drain-source on-state resistance, with a maximum of 9.2 mΩ at VGS=4.5V and ID=10A, and 7.2 mΩ at VGS=10V and ID=17A. The gate threshold voltage ranges from 1.2V to 2.2V. Dynamic characteristics such as input capacitance are up to 3980 pF, output capacitance up to 730 pF, and reverse transfer capacitance up to 58 pF.

 

This MOSFET operates over a wide temperature range from -55°C to +175°C and has a power dissipation of 65W at 25°C case temperature. It is supplied in a PG-TDSON-8 package, suitable for surface mounting. The device is also RoHS compliant and rated MSL1.

IPG20N04S4L-07 Quick Information

Product Type: Power-Transistor
Series: IPG20N04S4L
Canonical Name: Infineon IPG20N04S4L-07 OptiMOS™-T2 Power-Transistor
Subcategory: Power MOSFET

IPG20N04S4L-07 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1
REACH Status: REACH Unaffected

IPG20N04S4L-07 Estimated Pricing

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1+ $1.67 $1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPG20N04S4L-07 Features

  • Dual N-channel logic level enhancement mode MOSFET.
  • AEC Q101 qualified for automotive use.
  • Low drain-source on-state resistance.
  • Wide operating temperature range.
  • RoHS compliant and MSL1 rated.

IPG20N04S4L-07 Applications

  • Automotive engine control modules.
  • Power switching applications.
  • Load driving circuits.
  • DC-DC converters.

IPG20N04S4L-07 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the IPG20N04S4L-07?

The maximum continuous drain current is 20A at 25°C case temperature.

What is the drain-source breakdown voltage of the IPG20N04S4L-07?

The drain-source breakdown voltage is 40V.

What is the typical gate threshold voltage for this MOSFET?

The typical gate threshold voltage is 1.7V.

What is the maximum operating temperature for the IPG20N04S4L-07?

The maximum operating temperature is 175°C.

What package type is the IPG20N04S4L-07 supplied in?

It is supplied in a PG-TDSON-8 package.

Is the IPG20N04S4L-07 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

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