IPD95R450P7 The Infineon IPD95R450P7 is a 950V N-channel CoolMOS P7 SJ series power MOSFET. It features a maximum on-resistance of 0.45Ω and a typical gate threshold voltage of 3V.
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IPD95R450P7

Available from 4 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD95R450P7 is a 950V N-channel CoolMOS P7 SJ series power MOSFET. It features a maximum on-resistance of 0.45Ω and a typical gate threshold voltage of 3V.
✓ Total Stock: 12,851 pcs
$ Price Range: $6.44

IPD95R450P7 Available from 4 distributors

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IPD95R450P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Gate Charge
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IPD95R450P7 Description

Short technical summary and product information.

The Infineon IPD95R450P7 is a high-performance N-channel power MOSFET from the 950V CoolMOS P7 SJ series. This device sets a new benchmark in super junction technologies, offering best-in-class performance and ease of use.

 

Key electrical specifications include a maximum Drain-Source Voltage (VDS) of 950V, a maximum on-resistance (RDS(on)) of 0.45Ω, and a typical gate charge (Qg) of 35nC. The gate threshold voltage (VGS(th)) is typically 3V with a small variation of ±0.5V. It also features integrated ESD protection via a Zener diode.

 

This MOSFET is designed for applications requiring high power density and efficiency. It is recommended for flyback topologies in LED lighting, low-power chargers and adapters, smart meters, auxiliary power supplies, and industrial power supplies. It is also suitable for PFC stages in consumer and solar applications.

 

The IPD95R450P7 comes in a PG-TO252-3 (DPAK) surface-mount package. It is fully qualified according to JEDEC for industrial applications.

IPD95R450P7 Quick Information

Product Type: MOSFET
Series: CoolMOS P7 SJ
Canonical Name: IPD95R450P7 950V N-channel Power MOSFET
Subcategory: N-channel

IPD95R450P7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD95R450P7 Estimated Pricing

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1+ $6.44 $6.44

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD95R450P7 Features

  • 950V Drain-Source Voltage rating.
  • 0.45Ω maximum on-resistance.
  • 35nC typical gate charge.
  • 3V typical gate threshold voltage.
  • DPAK surface mount package.

IPD95R450P7 Applications

  • Recommended for flyback topologies.
  • Suitable for LED lighting applications.
  • Used in low-power chargers and adapters.
  • Applicable for industrial power supplies.
  • Can be used in PFC stages.

IPD95R450P7 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the IPD95R450P7?

The maximum Drain-Source Voltage (VDS) at Tj=25°C is 950V.

What is the maximum On-Resistance of the IPD95R450P7?

The maximum On-Resistance (RDS(on)) is 0.45Ω.

What is the typical Gate Charge for the IPD95R450P7?

The typical Gate Charge (Qg) is 35nC.

What is the typical Gate Threshold Voltage of the IPD95R450P7?

The typical Gate Threshold Voltage (VGS(th)) is 3V.

What package type is the IPD95R450P7 available in?

The IPD95R450P7 is available in the PG-TO252-3 package.

What are the recommended applications for the IPD95R450P7?

It is recommended for flyback topologies in LED lighting, low-power chargers and adapters, smart meters, auxiliary power, and industrial power supplies. It is also suitable for PFC stages in consumer and solar applications.

IPD95R450P7 Alternate Parts

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IPD95R450P7
IPD95R450P7
Infineon Technologies
The Infineon Technologies IPD95R450P7 is a 950V N-channel Power MOSFET from the CoolMOS P7 series. It offers best-in-class performance with a maximum RDS(on) of 0.45Ω.
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