TMBT3906.LMT
Toshiba
The Toshiba TMBT3906.LMT is a single bipolar junction transistor (BJT) in the Transistors - Bipolar (BJT) - Single category. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
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6,500 pcs
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6500 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The Infineon Technologies IPD90N04S4-05 is an N-channel OptiMOS®-T2 Power-Transistor. This AEC-qualified MOSFET offers a drain-source breakdown voltage of 40V and a maximum continuous drain current of 86A at 25°C.
Key electrical characteristics include a low drain-source on-state resistance of 5.2 mΩ (max) at 10V gate-source voltage and 86A drain current. The device operates over a wide temperature range from -55°C to +175°C.
Packaged in a PG-TO252-3-313 surface-mount package, the IPD90N04S4-05 is suitable for various power management and motor control applications. It boasts features like 100% avalanche tested and MSL1 rating up to 260°C peak reflow.
This MOSFET is designed for high efficiency and reliability in demanding environments, making it a suitable choice for automotive and industrial applications requiring robust power switching.
| Qty | Low | High |
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| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 86A at 25°C case temperature with a 10V gate-source voltage.
The drain-source breakdown voltage is 40V.
The maximum drain-source on-state resistance is 5.2 mΩ at 86A drain current and 10V gate-source voltage.
The operating and storage temperature range is -55°C to +175°C.
The IPD90N04S4-05 is supplied in the PG-TO252-3-313 package.
Yes, the IPD90N04S4-05 is AEC qualified.