| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,374 pcs
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4374 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
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2,742 pcs
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2742 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPD80R280P7 is an 800V N-channel power MOSFET belonging to the CoolMOS P7 series. This series sets a benchmark in 800V super junction technologies, combining high performance with ease of use.
Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 800V and a maximum On-Resistance (Rds(on)) of 0.28Ω. The typical Gate Charge (Qg) is 36nC, and the typical Gate-Source Threshold Voltage (Vgs(th)) is 3V. It also features an output capacitance (Eoss) of 4µJ at 500V and a continuous drain current (Id) of 17A.
This MOSFET is designed for hard and soft switching flyback topologies, making it suitable for applications such as LED lighting, low power chargers and adapters, audio power supplies, AUX power, and industrial power supplies. It is also suitable for PFC stages in consumer applications and solar power systems.
The IPD80R280P7 is supplied in a PG-TO252-3 package, designed for surface mounting.
800V maximum at Tj=25°C.
0.28Ω maximum.
17A.
36nC typical.
PG-TO252-3 surface mount package.
Class 2 (HBM).
3V typical.