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IPD80R600P7 The Infineon IPD80R600P7 is an 800V N-channel MOSFET from the CoolMOS P7 series. It offers a low on-resistance of 0.60Ω and typical gate charge of 20nC.
Mfr Part #:

IPD80R600P7

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD80R600P7 is an 800V N-channel MOSFET from the CoolMOS P7 series. It offers a low on-resistance of 0.60Ω and typical gate charge of 20nC.
✓ Total Stock: 6,173 pcs

IPD80R600P7 Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request 21+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,173 pcs
On Request
1173 pcs On Request 1 On Request On Request On Request On Request On Request
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IPD80R600P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Gate Charge
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IPD80R600P7 Description

Short technical summary and product information.

The Infineon IPD80R600P7 is an 800V N-channel power MOSFET belonging to the CoolMOS P7 series. This device is designed for high-performance applications, offering best-in-class figure of merit (FOM) for Rds(on) multiplied by Eoss, and reduced gate charge (Qg).

 

Key electrical characteristics include a maximum drain-source voltage (Vds) of 800V and a maximum on-resistance (Rds(on)) of 0.60Ω. The typical gate charge (Qg) is 20nC, and the typical gate-source threshold voltage (Vgs(th)) is 3V. The device also features integrated ESD protection.

 

Packaged in a DPAK (PG-TO252-3) surface-mount package, the IPD80R600P7 is suitable for applications requiring high power density and efficiency. It is recommended for hard and soft switching flyback topologies, including LED lighting, low-power chargers and adapters, audio power supplies, auxiliary power, and industrial power supplies. It is also suitable for PFC stages in consumer applications and solar power systems.

 

This MOSFET is fully qualified according to JEDEC for Industrial Applications, ensuring reliability and performance in demanding environments.

IPD80R600P7 Quick Information

Product Type: MOSFET
Series: CoolMOS P7
Canonical Name: Infineon IPD80R600P7 N-channel MOSFET
Subcategory: N-Channel

IPD80R600P7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD80R600P7 Features

  • 800V drain-source voltage rating.
  • 0.60Ω maximum on-resistance.
  • 20nC typical gate charge.
  • DPAK surface mount package.
  • Integrated ESD protection diode.

IPD80R600P7 Applications

  • Ideal for LED lighting applications.
  • Suitable for low power chargers.
  • Used in industrial power supplies.
  • Applicable for flyback topologies.

IPD80R600P7 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IPD80R600P7?

The maximum drain-source voltage (Vds) at Tj=25°C is 800V.

What is the maximum on-resistance of the IPD80R600P7?

The maximum on-resistance (Rds(on)) is 0.60Ω.

What is the typical gate charge for this MOSFET?

The typical gate charge (Qg) is 20nC.

What package type is the IPD80R600P7 supplied in?

The IPD80R600P7 is supplied in a PG-TO252-3 package.

What is the RoHS status of the IPD80R600P7?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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