IPD70P04P4-09
Infineon
The Infineon IPD70P04P4-09 is a P-channel MOSFET designed for power applications. It offers a -40V drain-source breakdown voltage and a continuous drain current of up to 73A.
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IPD70P04P4-09 is a P-channel, normal level, enhancement mode OptiMOS®-P2 Power MOSFET. It is AEC qualified and rated for operation up to 175°C.
Key electrical characteristics include a drain-source breakdown voltage of -40V and a typical drain-source on-state resistance of 6.4mΩ at -10V gate-source voltage and -70A drain current, with a maximum of 8.9mΩ. The continuous drain current is rated at -73A at 25°C case temperature and -52A at 100°C case temperature, with a pulsed drain current capability of -292A.
This MOSFET features a thermal resistance junction-to-case of 2 K/W and junction-to-ambient of 62 K/W. It is supplied in a PG-TO252-3-313 surface-mount package.
Additional features include 100% avalanche tested and a green package compliant with RoHS standards. The operating and storage temperature range is -55°C to +175°C.
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| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -40V.
The typical gate threshold voltage is 3V.
The maximum continuous drain current is -73A at 25°C case temperature.
The maximum drain-source on-state resistance is 8.9mΩ.
The maximum power dissipation is 75W at 25°C case temperature.
The operating and storage temperature range is -55°C to +175°C.
The package type is PG-TO252-3-313.