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IPD70P04P4-09 The Infineon IPD70P04P4-09 is a P-channel MOSFET designed for power applications. It offers a -40V drain-source breakdown voltage and a continuous drain current of up to 73A.
Mfr Part #:

IPD70P04P4-09

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD70P04P4-09 is a P-channel MOSFET designed for power applications. It offers a -40V drain-source breakdown voltage and a continuous drain current of up to 73A.
✓ Total Stock: 21,595 pcs
$ Price Range: $0.71

IPD70P04P4-09 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
Non-Authorised Inventory information
20,000 pcs
On Request
20000 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,565 pcs
On Request
1565 pcs On Request 1 On Request On Request On Request On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
30 pcs
On Request
30 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPD70P04P4-09 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
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Power Dissipation
Reverse Recovery Time
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IPD70P04P4-09 Description

Short technical summary and product information.

The Infineon IPD70P04P4-09 is a P-channel, normal level, enhancement mode MOSFET from the OptiMOS®-P2 series. It is AEC qualified and rated for operation up to 175°C.

 

Key electrical specifications include a drain-source breakdown voltage of -40V and a typical drain-source on-state resistance of 6.4mΩ at an ID of -70A and VGS of -10V. The continuous drain current is rated at -73A at 25°C case temperature.

 

This MOSFET is supplied in a PG-TO252-3-313 package, suitable for surface mounting. It features a green package and is RoHS compliant. The device is 100% avalanche tested, ensuring reliability in demanding applications.

IPD70P04P4-09 Quick Information

Product Type: MOSFET
Series: OptiMOS®-P2
Canonical Name: IPD70P04P4-09 P-Channel MOSFET
Subcategory: P-Channel

IPD70P04P4-09 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD70P04P4-09 Estimated Pricing

Qty Low High
1+ $0.71 $0.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD70P04P4-09 Features

  • P-channel enhancement mode MOSFET.
  • AEC qualified for automotive use.
  • -40V drain-source breakdown voltage.
  • Low on-resistance: 6.4mΩ typical.
  • PG-TO252-3-313 surface mount package.

IPD70P04P4-09 Applications

  • Suitable for power switching applications.
  • Ideal for automotive systems.
  • Used in DC-DC converters.
  • Efficient for load switching.

IPD70P04P4-09 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the IPD70P04P4-09?

-40V

What is the typical gate threshold voltage for the IPD70P04P4-09?

3V

What is the typical drain-source on-state resistance of the IPD70P04P4-09?

6.4mΩ

What is the maximum continuous drain current for the IPD70P04P4-09?

-73A

What is the maximum operating temperature for the IPD70P04P4-09?

175°C

What package is the IPD70P04P4-09 supplied in?

PG-TO252-3-313

IPD70P04P4-09 Alternate Parts

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Infineon Technologies
The Infineon Technologies IPD70P04P4-09 is a P-channel Power MOSFET designed for high-performance applications. It offers a -40V drain-source breakdown voltage and a maximum continuous drain current of -73A.
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