IPZ40N04S5L-2R8
Infineon
The Infineon IPZ40N04S5L-2R8 is an automotive-grade N-channel power MOSFET. It offers a 40V drain-source voltage and a continuous drain current of 40A.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,386 pcs
|
7386 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
2,350 pcs
|
2350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present |
The Infineon IPD50N06S4-09 is an N-channel Power MOSFET from the OptiMOS®-T2 family. It features a drain-source breakdown voltage of 60V and a maximum drain-source on-state resistance of 9.0 mΩ at a gate-source voltage of 10V and a continuous drain current of 50A.
This MOSFET is designed for efficient power switching applications. It has a continuous drain current rating of 50A at 25°C case temperature and 47A at 100°C case temperature. The device also boasts a pulsed drain current capability of 200A and a single pulse avalanche energy of 87 mJ.
Packaged in a PG-TO252-3-11 surface-mount package, the IPD50N06S4-09 operates across a wide temperature range from -55°C to +175°C. Its thermal resistance from junction to case is 2.1 K/W, and from junction to ambient is 62 K/W on a minimal footprint PCB.
Key electrical characteristics include a gate threshold voltage typically around 3V, low gate charge, and fast switching times. The integrated body diode provides essential freewheeling capabilities for inductive loads.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60 V at VGS=0V, ID=1mA.
The package is PG-TO252-3-11 for surface mount.
-55°C to +175°C.
50 A at TC=25°C with VGS=10V.
7.1 mOhm typical at VGS=10V, ID=50A.
Between 2 V and 4 V, with typical 3 V at VDS=VGS, ID=34µA.
Yes, single pulse avalanche energy is 87 mJ at ID=25A.