| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Halogen Free | |
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The Infineon IPZ40N04S5L-2R8 is an N-channel enhancement mode, logic-level power MOSFET designed for automotive applications. It is AEC Q101 qualified and features a maximum operating temperature of 175°C.
Key electrical characteristics include a drain-source breakdown voltage of 40V and a maximum continuous drain current of 40A at 25°C case temperature. The on-state resistance (RDS(on)) is as low as 2.8 mΩ at VGS=10V and ID=20A. Dynamic characteristics include input capacitance (Ciss) up to 2800 pF and output capacitance (Coss) up to 625 pF.
This MOSFET is supplied in a PG-TSDSON-8-33 package suitable for surface mounting. It also boasts 100% avalanche tested and is RoHS compliant.
With its robust design and automotive qualification, the IPZ40N04S5L-2R8 is suitable for various power management tasks in automotive systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 40V.
The continuous drain current (ID) is 40A at TC=25°C with VGS=10V.
The maximum on-resistance (RDS(on)) is 2.8mΩ at VGS=10V, ID=20A, with a typical value of 2.2mΩ.
It is housed in a PG-TSDSON-8-33 surface-mount package.
The operating junction temperature range is -55°C to +175°C.
The gate threshold voltage (VGS(th)) is 1.2V typical, with a range of 1.2V to 2.0V.
The maximum power dissipation is 71W at case temperature 25°C.