Mfr Part #:

IPD50N04S4-10

Mfr Name: Infineon

The Infineon IPD50N04S4-10 is an N-channel Power MOSFET designed for automotive applications. It offers a 40V drain-source breakdown voltage and a continuous drain current of 50A.

✓ Total Stock: 11,718 pcs

$ Price Range: $2.40

IPD50N04S4-10 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	10,000 pcs On Request	10000 pcs	On Request	1	On Request	On Request	16+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,718 pcs On Request	1718 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPD50N04S4-10 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Mounting Type	Surface Mount
Operating Temperature	175°C
Power Dissipation	41 W

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IPD50N04S4-10 Description

Short technical summary and product information.

The Infineon IPD50N04S4-10 is an N-channel OptiMOS®-T2 Power MOSFET. It features a drain-source breakdown voltage of 40V and a continuous drain current of 50A at 25°C case temperature with VGS=10V. The on-state resistance is a maximum of 9.3 mΩ at VGS=10V and ID=50A.

This AEC-qualified MOSFET operates at temperatures up to 175°C and has an MSL1 rating. It is supplied in a PG-TO252-3-313 package suitable for surface mounting.

Key electrical characteristics include a gate threshold voltage between 2.0V and 4.0V, and dynamic parameters such as input capacitance of 1100pF typical and output capacitance of 290pF typical. The device also includes a reverse diode with a continuous forward current of 50A.

This component is suitable for various automotive PWM control applications requiring high current and efficient switching.

IPD50N04S4-10 Quick Information

Product Type: N-channel Power MOSFET

Series: OptiMOS®-T2

Canonical Name: Infineon IPD50N04S4-10 N-channel Power MOSFET

Subcategory: N-Channel

IPD50N04S4-10 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPD50N04S4-10 Estimated Pricing

Qty	Low	High
1+	$2.40	$2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD50N04S4-10 Features

N-channel enhancement mode MOSFET.
AEC qualified for automotive use.
Maximum 9.3 mΩ drain-source on-state resistance.
Continuous drain current up to 50A.
Operating temperature up to 175°C.

IPD50N04S4-10 Applications

Suitable for DC-DC converter circuits.
Used in power management for automotive.
Ideal for motor control applications.
Applicable in high-frequency switching supplies.

IPD50N04S4-10 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 40V.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 3.0V.

What is the maximum drain-source on-state resistance?

The maximum drain-source on-state resistance is 9.3 mΩ.

What is the continuous drain current?

The continuous drain current is 50A at 25°C case temperature.

What is the maximum operating temperature?

The maximum operating temperature is 175°C.

What package is the IPD50N04S4-10 in?

The IPD50N04S4-10 is in a PG-TO252-3-313 package.

IPD50N04S4-10 Alternate Parts

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IPG20N04S4L-11

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The Infineon IPG20N04S4L-11 is a dual N-channel OptiMOS™-T2 Power-Transistor designed for automotive applications. It features a 40V drain-source breakdown voltage and a maximum continuous drain current of 20A.

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