TMBT3906.LMT
Toshiba
The Toshiba TMBT3906.LMT is a single bipolar junction transistor (BJT) in the Transistors - Bipolar (BJT) - Single category. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
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7,795 pcs
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7795 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IPD25N06S4L-30 is an OptiMOS®-T2 Power-Transistor featuring N-channel enhancement mode operation. This MOSFET is AEC Q101 qualified and rated for a continuous drain current of 25A at 25°C case temperature with a 10V gate-source voltage. It boasts a drain-source breakdown voltage of 60V.
Key electrical characteristics include a gate threshold voltage ranging from 1.2V to 2.2V. The drain-source on-state resistance is specified as a maximum of 30mΩ at 25A and 10V gate-source voltage. Dynamic characteristics include input capacitance (Ciss) up to 1220pF and output capacitance (Coss) up to 345pF.
This device operates within a temperature range of -55°C to +175°C. It is packaged in a PG-TO252-3-11 surface-mount package. The IPD25N06S4L-30 is also noted as a Green Product, compliant with RoHS standards.
| Qty | Low | High |
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| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The maximum continuous drain current is 25A at TC=25°C, VGS=10V.
The typical gate threshold voltage is 1.7V.
The maximum drain-source on-state resistance is 30mΩ at VGS=10V, ID=25A.
The operating and storage temperature range is -55°C to +175°C.
It is supplied in the PG-TO252-3-11 package.
Yes, it is RoHS3 Compliant.