IPG20N06S4L-14A
Infineon
The Infineon IPG20N06S4L-14A is a dual N-channel logic level enhancement mode Power MOSFET. It offers a 60V drain-source breakdown voltage and a continuous drain current of 20A.
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1,790 pcs
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1790 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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600 pcs
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600 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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The Infineon IPC100N04S5-1R9 is an OptiMOS™-5 series N-channel power MOSFET. It is designed for automotive applications and is AEC Q101 qualified. This device features a drain-source breakdown voltage of 40V and a continuous drain current of 100A at 25°C case temperature.
The MOSFET exhibits a low on-state resistance, with a maximum of 1.9 mΩ at VGS=10V and ID=50A. It operates with a gate source voltage range of ±20V and has a maximum power dissipation of 100W at 25°C case temperature. The operating and storage temperature range is -55°C to +175°C.
Packaged in a PG-TDSON-8-34, this component is suitable for surface mounting. It boasts a high operating temperature capability and is 100% avalanche tested. The device is also RoHS compliant and rated MSL1.
| Qty | Low | High |
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| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The maximum continuous drain current is 100A.
The typical on-state resistance is 1.9mΩ at VGS=7V, ID=50A and 1.6mΩ at VGS=10V, ID=50A.
The operating temperature range is -55°C to +175°C.
The IPC100N04S5-1R9 is supplied in the PG-TDSON-8-34 package.