| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,000 pcs
|
25000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
5,027 pcs
|
5027 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Input Capacitance | |
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| Operating Temperature | |
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| Storage Temperature |
The Infineon IPG20N06S4L-14A is a high-performance OptiMOS™-T2 Power-Transistor designed for automotive and industrial applications. This dual N-channel MOSFET features logic-level enhancement mode operation, a drain-source breakdown voltage of 60V, and a continuous drain current capability of 20A at 25°C.
Key electrical characteristics include a maximum drain-source on-state resistance of 13.7 mΩ at VGS=10V and ID=17A, and a gate threshold voltage ranging from 1.2V to 2.2V. The device supports a gate source voltage of ±16V and has a power dissipation of 50W at 25°C.
Packaged in a PG-TDSON-8 surface-mount package, the IPG20N06S4L-14A operates across a wide temperature range from -55°C to +175°C. It is AEC Q101 qualified and RoHS compliant, making it suitable for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 60V at VGS=0V and ID=1mA.
The continuous drain current is 20A at TC=25°C with VGS=10V.
The maximum on-state resistance is 13.7mΩ at VGS=10V and ID=17A, and 20mΩ at VGS=4.5V and ID=10A.
The operating junction temperature range is -55°C to +175°C.
It is housed in a PG-TDSON-8 surface-mount package.
The maximum total gate charge is 39nC.
The maximum reverse recovery time is 35ns at VR=30V, IF=IS, and dIF/dt=100A/µs.