Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	80A (Tc)
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	148 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4400 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	300W (Tc)
Rds On (Max) @ Id, Vgs	3.7mOhm @ 80A, 10V
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA

IPB80N04S2H4ATMA1

IPB80N04S2H4ATMA1 Specifications Quick View