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IPB60R099C7 The Infineon IPB60R099C7 is a 600V CoolMOS C7 N-channel power MOSFET. It features a maximum Rds(on) of 99mΩ and is designed for high-voltage power applications.
Mfr Part #:

IPB60R099C7

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPB60R099C7 is a 600V CoolMOS C7 N-channel power MOSFET. It features a maximum Rds(on) of 99mΩ and is designed for high-voltage power applications.
✓ Total Stock: 1,487 pcs
$ Price Range: $2.40

IPB60R099C7 Available from 1 distributor

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✓ Non-Authorised
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Xingangxin ✓
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1,487 pcs
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IPB60R099C7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IPB60R099C7 Description

Short technical summary and product information.

The Infineon IPB60R099C7 is a high-performance N-channel power MOSFET from the CoolMOS C7 series. This transistor is designed using Infineon's superjunction technology, offering a 600V breakdown voltage and a low maximum on-resistance of 99mΩ. It is suitable for both hard and soft switching applications, including Power Factor Correction (PFC) and high-performance LLC circuits.

 

Key electrical characteristics include a typical gate charge (Qg) of 42nC, a pulsed drain current (ID,pulse) of 83A, and a continuous drain current (ID,continuous) of 36A at Tj<150°C. The device also offers increased MOSFET dv/dt ruggedness up to 120V/ns and low energy loss (Eoss) at 400V of 4.95 µJ.

 

Packaged in a PG-TO 263 surface-mount package, the IPB60R099C7 is qualified for industrial-grade applications according to JEDEC standards. Its design benefits include higher system efficiency due to lower switching losses and increased power density solutions. Applications include SMPS for computing, server, telecom, UPS, and solar systems.

IPB60R099C7 Quick Information

Product Type: MOSFET
Series: CoolMOS C7
Canonical Name: Infineon IPB60R099C7 N-Channel Power MOSFET
Subcategory: Power MOSFET

IPB60R099C7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB60R099C7 Estimated Pricing

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1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB60R099C7 Features

  • 600V CoolMOS C7 N-channel power MOSFET.
  • Low 99mΩ maximum on-resistance.
  • High 83A pulsed drain current capability.
  • Suitable for hard and soft switching.
  • PG-TO 263 surface mount package.

IPB60R099C7 Applications

  • Used in PFC and PWM stages.
  • Ideal for high-power SMPS.
  • Suitable for server applications.
  • Designed for telecom systems.
  • Applicable in solar power systems.

IPB60R099C7 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IPB60R099C7?

The maximum drain-source voltage (VDS) at Tj,max is 650V.

What is the maximum on-resistance of the Infineon IPB60R099C7?

The maximum on-resistance (Rds(on)) is 99mΩ.

What is the typical gate charge for this MOSFET?

The typical gate charge (Qg) is 42nC.

What is the continuous drain current rating?

The continuous drain current (ID,continuous) is 36A at Tj<150°C.

What package type is the IPB60R099C7 supplied in?

The IPB60R099C7 is supplied in a PG-TO 263 package.

What are the primary applications for the IPB60R099C7?

It is suitable for PFC stages and PWM stages in high-power SMPS, including computing, server, telecom, UPS, and solar applications.

IPB60R099C7 Alternate Parts

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The Infineon IPL60R115CFD7 is a 650V CoolMOS CFD7 power transistor. It offers 115mΩ maximum on-resistance and 42nC typical gate charge.
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