Mfr Part #:

IPL60R115CFD7

Mfr Name: Infineon

The Infineon IPL60R115CFD7 is a 650V CoolMOS CFD7 power transistor. It offers 115mΩ maximum on-resistance and 42nC typical gate charge.

✓ Total Stock: 5,450 pcs

IPL60R115CFD7 Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	5,450 pcs On Request	5450 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPL60R115CFD7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	42nC
Mounting Type	Surface Mount
Package / Case	PG-VSON-4
SVHC Present	Not Present

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IPL60R115CFD7 Description

Short technical summary and product information.

The Infineon IPL60R115CFD7 is a high-voltage power transistor utilizing Infineon's CoolMOS CFD7 technology. This technology is based on the superjunction principle and is optimized for soft switching applications such as phase-shift full-bridge (ZVS) and LLC topologies.

Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V, a maximum on-resistance (Rds(on)) of 115mΩ, and a typical gate charge (Qg) of 42nC. It also features a pulsed drain current (Id,pulse) of 79A and output capacitance (Eoss) of 4.8µJ at 400V. The device includes an ultra-fast body diode with improved reverse recovery charge (Qrr) and ruggedness.

This power transistor is supplied in a PG-VSON-4 package suitable for surface mounting. Its design focuses on high efficiency, reliability, and enabling increased power density solutions for applications like server, telecom, and EV charging.

The IPL60R115CFD7 is fully qualified according to JEDEC standards for industrial applications, offering excellent hard commutation ruggedness and an outstanding ease-of-use/performance tradeoff.

IPL60R115CFD7 Quick Information

Product Type: Power Transistor

Series: CFD7

Canonical Name: IPL60R115CFD7 CoolMOS CFD7 Power Transistor

Subcategory: Power MOSFET

IPL60R115CFD7 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPL60R115CFD7 Features

650V Drain-Source Voltage rating.
115mΩ maximum on-resistance.
42nC typical gate charge.
Optimized for soft switching topologies.
PG-VSON-4 surface mount package.

IPL60R115CFD7 Applications

Suitable for soft switching.
Optimized for ZVS and LLC.
Used in server applications.
Used in telecom applications.
Used in EV charging.

IPL60R115CFD7 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum Drain-Source Voltage (Vds) for the IPL60R115CFD7?

The maximum Drain-Source Voltage (Vds) at Tj,max is 650V.

What is the maximum On-Resistance (Rds(on)) for the IPL60R115CFD7?

The maximum On-Resistance (Rds(on)) is 115mΩ.

What is the typical Gate Charge (Qg) for the IPL60R115CFD7?

The typical Gate Charge (Qg) is 42nC.

What package type is the IPL60R115CFD7 supplied in?

The IPL60R115CFD7 is supplied in a PG-VSON-4 package.

What are the primary applications for the IPL60R115CFD7?

The IPL60R115CFD7 is suitable for soft switching topologies, optimized for phase-shift full-bridge (ZVS) and LLC applications, including server, telecom, and EV charging.