| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,030 pcs
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4030 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,440 pcs
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1440 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
251 pcs
|
251 pcs | On Request | 1 | On Request | On Request | 1813+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
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| Power Dissipation |
The Infineon IPB048N15N5LF is an N-channel MOSFET from the OptiMOSTM 5 series, operating at 150V. This LinearFET is engineered for demanding applications such as hot-swap and electronic fuses (e-fuse).
Key electrical characteristics include a maximum on-resistance of 4.8 mΩ at VGS=10V and a continuous drain current of 150A at 25°C. It also features a high pulsed drain current capability of 600A and an avalanche energy rating of 30 mJ.
The device is housed in a PG-TO263-3 surface mount package. It is Pb-free and halogen-free, compliant with RoHS standards. The MOSFET is 100% avalanche tested and qualified according to JEDEC standards for target applications.
This component is suitable for designs requiring high efficiency, robust performance, and reliable operation in power management systems.
The maximum drain-source voltage (VDS) is 150 V.
The maximum on-resistance (RDS(on)) is 4.8 mΩ when the gate-source voltage (VGS) is 10 V.
The continuous drain current (ID) is rated at 150 A at 25°C with a VGS of 10 V, and 115 A at 100°C.
The IPB048N15N5LF is supplied in the PG-TO263-3 package.
Yes, the IPB048N15N5LF is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1.
This MOSFET is ideal for hot-swap and e-fuse applications.