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IPB017N10N5LF

The Infineon Technologies IPB017N10N5LF is an N-channel MOSFET with a 100V drain-source voltage and a low on-resistance of 1.7 mΩ. It is supplied in a PG-TO263-7 package.

✓ Total Stock: 15,209 pcs

IPB017N10N5LF Available from 3 distributors

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	7,000 pcs On Request	7000 pcs	On Request	1	On Request	On Request	22+	On Request	On Request
PROSOFT ELECTRONICS ✓ Non-Authorised Inventory information	5,000 pcs On Request	5000 pcs	On Request	1	On Request	On Request	18+22+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	3,209 pcs On Request	3209 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPB017N10N5LF Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon Technologies
Halogen Free	Halogen-free
Lead Style	Gull-Wing
Mounting Type	Surface Mount
Power Dissipation	313 W
SVHC Present	Not Present

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IPB017N10N5LF Description

Short technical summary and product information.

The Infineon Technologies IPB017N10N5LF is an N-channel MOSFET designed for applications such as hot-swap and e-fuse. It features a maximum drain-source voltage (VDS) of 100V and a very low on-resistance (RDS(on)) of 1.7 mΩ at a gate-source voltage (VGS) of 10V and a continuous drain current (ID) of 100A.

This MOSFET offers a continuous drain current of up to 256A at 25°C and 198A at 100°C, with a pulsed drain current capability of 1024A. It also has a wide safe operating area (SOA) and is 100% avalanche tested, with a single pulse avalanche energy (EAS) of 979 mJ.

The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 313W at 25°C. It is packaged in a PG-TO263-7 surface-mount package. The component is Pb-free plating and RoHS compliant, as well as Halogen-free according to IEC61249-2-21.

IPB017N10N5LF Quick Information

Product Type: MOSFET

Series: Linear FET

Canonical Name: Infineon Technologies IPB017N10N5LF N-channel MOSFET

Subcategory: N-Channel

IPB017N10N5LF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

IPB017N10N5LF Features

Ideal for hot-swap and e-fuse applications.
Very low on-resistance RDS(on).
Wide safe operating area SOA.
N-channel, normal level MOSFET.
100% avalanche tested.

IPB017N10N5LF Applications

Ideal for hot-swap and e-fuse applications
Suitable for high-current power switching
Designed for wide safe operating area
Used in industrial power management systems
Applicable for high-efficiency DC-DC converters

IPB017N10N5LF FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the IPB017N10N5LF?

The maximum drain-source voltage (VDS) for the IPB017N10N5LF is 100V.

What is the typical on-resistance of the IPB017N10N5LF MOSFET?

The maximum on-resistance (RDS(on)) of the IPB017N10N5LF is 1.7 mΩ at a continuous drain current of 100A and gate-source voltage of 10V.

What is the continuous drain current rating for the IPB017N10N5LF?

The continuous drain current (ID) for the IPB017N10N5LF is 256A at 25°C and 198A at 100°C.

What package type is the IPB017N10N5LF MOSFET supplied in?

The IPB017N10N5LF MOSFET is supplied in a PG-TO263-7 package.

What is the operating temperature range for the IPB017N10N5LF?

The operating and storage temperature range for the IPB017N10N5LF is -55°C to 150°C.

Is the IPB017N10N5LF RoHS compliant?

Yes, the IPB017N10N5LF is RoHS3 Compliant.

Is the IPB017N10N5LF Halogen-free?

Yes, the IPB017N10N5LF is Halogen-free.