Mfr Part #:

IPA80R360P7

Mfr Name: Infineon

The Infineon IPA80R360P7 is an 800V N-channel Power MOSFET from the CoolMOS P7 series. It offers a low Rds(on) of 0.36 Ohms and is housed in a PG-TO 220 FullPAK package.

✓ Total Stock: 1,530 pcs

IPA80R360P7 Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	1,530 pcs On Request	1530 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPA80R360P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Package / Case	PG-TO 220 FullPAK
Storage Temperature	-55°C ~ 150°C

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IPA80R360P7 Description

Short technical summary and product information.

The Infineon IPA80R360P7 is an 800V N-channel Power MOSFET belonging to the advanced CoolMOS P7 series. This device sets a new benchmark in 800V super junction technologies, combining high performance with ease of use.

Key electrical specifications include a maximum Drain-Source On-State Resistance (Rds(on)) of 0.36 Ohms and a typical Gate Charge (Qg) of 30 nC. The MOSFET features an 800V Drain-Source Voltage (Vds) and an Energy in Output Capacitance (Eoss) of 3.2 µJ at 500V. The typical Gate-Source Threshold Voltage (Vgs(th)) is 3V.

This power MOSFET is designed for hard and soft switching flyback topologies. Potential applications include LED lighting, low power chargers and adapters, audio power supplies, auxiliary power, and industrial power supplies. It is also suitable for PFC stages in consumer applications and solar energy systems.

The IPA80R360P7 is supplied in a PG-TO 220 FullPAK package, designed for efficient thermal management and ease of assembly.

IPA80R360P7 Quick Information

Product Type: MOSFET

Series: CoolMOS P7

Canonical Name: IPA80R360P7 800V CoolMOS P7 N-channel Power MOSFET

Subcategory: Power MOSFET

IPA80R360P7 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPA80R360P7 Features

800V Drain-Source Voltage rating.
0.36 Ohm maximum Rds(on).
30nC typical Gate Charge.
PG-TO 220 FullPAK package.
Integrated ESD protection diode.

IPA80R360P7 Applications

Ideal for LED lighting applications.
Suitable for low power chargers.
Used in industrial power supplies.
Applicable to flyback topologies.
Supports PFC stages in consumer devices.

IPA80R360P7 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum Drain-Source Voltage (Vds) for the IPA80R360P7?

The maximum Drain-Source Voltage (Vds) at Tj=25°C is 800V.

What is the maximum On-State Resistance (Rds(on)) for this MOSFET?

The maximum Drain-Source On-State Resistance (Rds(on)) is 0.36 Ohms.

What is the typical Gate Charge (Qg) for the IPA80R360P7?

The typical Gate Charge (Qg) is 30 nC.

What package type is the IPA80R360P7 MOSFET supplied in?

The IPA80R360P7 is supplied in a PG-TO 220 FullPAK package.

What is the RoHS status of the IPA80R360P7?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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