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IPA65R190E6XKSA1 MOSFET N-CH 650V 20.2A TO220
Mfr Part #:

IPA65R190E6XKSA1

Mfr Name: Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 20.2A TO220
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IPA65R190E6XKSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IPA65R190E6XKSA1 Description

Short technical summary and product information.
MOSFET N-CH 650V 20.2A TO220

IPA65R190E6XKSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPA65R190E6XKSA1 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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IPA65R190E6
IPA65R190E6
Infineon Technologies
Infineon IPA65R190E6 is a 650V N-Channel MOSFET with 20.2A continuous drain current and 190mOhm typical on-resistance. It comes in a TO-220-3 Full Pack package for through hole mounting.
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IPA65R190C6XKSA1
IPA65R190C6XKSA1
Infineon Technologies
MOSFET N-CH 650V 20.2A TO220
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