| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,000 pcs
|
14000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon IPA65R190E6 is an N-Channel power MOSFET designed for high-voltage switching applications. It features a maximum drain to source voltage of 650V, a continuous drain current of 20.2A at case temperature 25°C, and a maximum on-resistance of 190mOhm at 7.3A drain current and 10V gate drive. The device offers a gate charge of 73nC at 10V and input capacitance of 1620pF at 100V. It is housed in a TO-220-3 Full Pack package (PG-TO220-3-111) with through hole mounting. The operating junction temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.05 | $4.05 |
| 10+ | $2.78 | $2.78 |
| 100+ | $2.11 | $2.11 |
| 500+ | $1.68 | $1.68 |
| 2,500+ | $1.66 | $1.66 |
| 5,000+ | $1.61 | $1.61 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain to source voltage is 650V.
It comes in a TO-220-3 Full Pack (PG-TO220-3-111) package with through hole mounting.
The junction temperature range is -55°C to 150°C.
RoHS3 Compliant (unverified).
The maximum continuous drain current is 20.2A at case temperature 25°C.
Maximum on-resistance is 190mOhm at 7.3A drain current and 10V gate drive.
Typical gate charge is 73nC at 10V gate voltage.