| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,837 pcs
|
1837 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Mounting Type | |
| SVHC Present |
The Infineon IMW120R090M1H is a 1200V Silicon Carbide (SiC) Trench MOSFET designed for high-efficiency power applications. It features very low switching losses, a threshold-free on-state characteristic, and a wide gate-source voltage range.
Key electrical specifications include a maximum Drain-Source Voltage (VDS) of 1200V and a continuous Drain Current (ID) of 26A at 25°C. The on-resistance (RDS(on)) is 90mΩ at 25°C with a gate-source voltage of 18V. The device has a benchmark gate threshold voltage (VGS(th)) of 4.5V, enabling simple gate drive with 0V turn-off.
With a maximum junction temperature of 175°C, this MOSFET is suitable for demanding industrial applications. It is packaged in a PG-TO247-3 through-hole configuration, facilitating integration into various power designs. Potential applications include energy generation, industrial power supplies, and charging infrastructure.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200V.
26A at TC=25°C.
90mΩ at Tvj=25°C, ID=8.5A, VGS=18V.
175°C.
4.5V (benchmark).
PG-TO247-3.
Through Hole.
