IMW120R060M1H The Infineon IMW120R060M1H is a 1200V Silicon Carbide Trench MOSFET. It offers very low switching losses and a benchmark gate threshold voltage of 4.5V.
Mfr Part #:

IMW120R060M1H

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IMW120R060M1H is a 1200V Silicon Carbide Trench MOSFET. It offers very low switching losses and a benchmark gate threshold voltage of 4.5V.
✓ Total Stock: 1,420 pcs
$ Price Range: $2.40

IMW120R060M1H Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,420 pcs
1420 pcs On Request 1 On Request On Request On Request On Request On Request

IMW120R060M1H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Mounting Type
SVHC Present

IMW120R060M1H Description

Short technical summary and product information.

The Infineon IMW120R060M1H is a high-performance Silicon Carbide (SiC) Trench MOSFET designed for demanding applications. With a Drain-Source Voltage (VDS) rating of 1200V and a continuous Drain Current (ID) of 36A at 25°C, this MOSFET is built for efficiency and power density.

 

Key electrical characteristics include a low On-Resistance (RDS(on)) of 60mΩ at 25°C (ID=13A, VGS=18V) and a benchmark gate threshold voltage (VGS(th)) of 4.5V. The device features threshold-free on-state characteristics and a wide gate-source voltage range, enabling easy and simple gate drive with 0V turn-off capability.

 

Designed for improved efficiency and higher frequency operation, the IMW120R060M1H is suitable for applications such as solar string inverters, industrial UPS, and industrial SMPS. Its robust body diode is beneficial for hard commutation scenarios. The MOSFET is qualified for industrial applications according to JEDEC 47/20/22 standards and comes in a PG-TO247-3 package suitable for through-hole mounting.

 

This component offers benefits like increased power density, reduced cooling effort, and a reduction in system complexity and cost, making it a valuable choice for power electronics designs.

IMW120R060M1H Quick Information

Product Type: MOSFET
Series: Trench MOSFET
Canonical Name: Infineon IMW120R060M1H CoolSiC™ 1200V SiC Trench MOSFET
Subcategory: Silicon Carbide Trench MOSFET

IMW120R060M1H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IMW120R060M1H Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IMW120R060M1H Features

  • 1200V Drain-Source Voltage rating.
  • 36A continuous drain current.
  • Low 60mΩ on-resistance.
  • Benchmark 4.5V gate threshold.
  • 175°C maximum junction temperature.

IMW120R060M1H Applications

  • Ideal for solar string inverters.
  • Suitable for industrial UPS systems.
  • Used in industrial SMPS designs.
  • Supports energy generation applications.
  • Applicable to industrial power supplies.

IMW120R060M1H FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage (VDS) for the IMW120R060M1H?

The maximum Drain-Source Voltage (VDS) for the IMW120R060M1H is 1200V.

What is the continuous drain current (ID) of the IMW120R060M1H at 25°C?

The continuous drain current (ID) at 25°C for the IMW120R060M1H is 36A.

What is the on-resistance (RDS(on)) of the IMW120R060M1H under specified test conditions?

The on-resistance (RDS(on)) is 60mΩ when tested at Tvj = 25°C, ID = 13A, and VGS = 18V.

What is the gate threshold voltage (VGS(th)) for this MOSFET?

The benchmark gate threshold voltage (VGS(th)) is 4.5V.

What is the maximum operating junction temperature for the IMW120R060M1H?

The maximum junction temperature (Tvj,max) is 175°C.

What package type is the IMW120R060M1H supplied in?

The IMW120R060M1H is supplied in the PG-TO247-3 package.

IMW120R060M1H Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
SS010M0100AZS-0507
SS010M0100AZS-0507
Yageo
The Yageo SS010M0100AZS-0507 is an aluminum electrolytic capacitor with a capacitance of 100µF and a rated voltage of 10V. It features a capacitance tolerance of ±20% and operates within a temperature range of -40°C to +105°C.
View Part
IPW60R070C6
IPW60R070C6
Infineon
The Infineon IPW60R070C6 is an N-channel power MOSFET featuring a 600V breakdown voltage. It is designed for through-hole mounting.
View Part
IKW50N65ES5
IKW50N65ES5
Infineon
The Infineon IKW50N65ES5 is a high-speed soft switching IGBT with a 650V breakdown voltage and 50A continuous collector current. It is packaged in a PG-TO247-3.
View Part
IPW60R041P6
IPW60R041P6
Infineon
The Infineon IPW60R041P6 is a 600V CoolMOS P6 series N-channel power MOSFET. It offers extremely low switching and conduction losses, making it suitable for efficient power management applications.
View Part
Home
Account

Categories