| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,251 pcs
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6251 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
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| Package / Case | |
| SVHC Present |
The Infineon IPW60R041P6 is a high-voltage N-channel power MOSFET from the CoolMOS P6 series, designed using the superjunction principle. This technology provides significant benefits in terms of efficiency, compactness, and thermal performance for switching applications.
Key electrical characteristics include a maximum drain-source voltage of 650V and a maximum on-resistance of 41mΩ. It features a typical gate charge of 170nC and a pulsed drain current capability of 267A. The energy in output capacitance (Eoss) at 400V is 20.5 µJ, and the body diode di/dt is rated at 300 A/µs.
Designed for ease of use and high performance, the IPW60R041P6 offers increased MOSFET dv/dt ruggedness and very high commutation ruggedness. It is suitable for applications such as PFC stages, hard-switching PWM stages, and resonant switching stages found in power supplies, adapters, lighting, servers, and UPS systems.
The component is housed in a PG-TO 247 package, suitable for through-hole mounting. It features Pb-free plating and a halogen-free mold compound, meeting industrial grade application standards.
The maximum drain-source voltage is 650V.
The maximum on-resistance is 41mΩ.
The typical gate charge is 170nC.
The IPW60R041P6 is available in a PG-TO 247 package.
The pulsed drain current rating is 267A.
The output capacitance energy at 400V is 20.5µJ.
The body diode di/dt rating is 300A/µs.