| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,333 pcs
|
5333 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,321 pcs
|
1321 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
720 pcs
|
720 pcs | On Request | 1 | On Request | On Request | 22+23+ | On Request | On Request |
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The Infineon IKW75N65ES5 is a high-speed, soft-switching Insulated Gate Bipolar Transistor (IGBT) designed for industrial power control applications. It features TRENCHSTOP 5 technology, offering efficient switching characteristics.
Key electrical specifications include a breakdown voltage of 650V and a continuous collector current rating of 75A. The device exhibits a low collector-emitter saturation voltage (VCEsat) of 1.42V at 25°C. The maximum junction temperature is rated at 175°C, ensuring robust performance under demanding conditions.
This IGBT is copacked with a full-current-rated RAPID 1 fast antiparallel diode, enhancing its switching capabilities. The package type is PG-TO247-3, a through-hole mounting configuration suitable for various power electronics designs.
Applications for the IKW75N65ES5 include resonant converters, uninterruptible power supplies, welding converters, and mid-to-high range switching frequency converters. It is designed for plug-and-play replacement of previous generation IGBTs.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.63 | $3.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 650V.
The typical collector-emitter saturation voltage is 1.42V at 25°C.
The maximum junction temperature is 175°C.
The package type is PG-TO247-3.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.