| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22,333 pcs
|
22333 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request | |
|
3,209 pcs
|
3209 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
480 pcs
|
480 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Mounting Type | |
| Tape & Reel |
The Infineon IKW50N60T is a high-performance Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. This component is designed for power switching applications and is housed in a standard TO-247 package, suitable for through-hole mounting.
Key electrical specifications include a maximum collector-emitter voltage of 600V and a maximum collector current of 80A. The device offers a maximum power dissipation of 333W, indicating its capability for handling significant power loads. The typical saturation voltage (VCEsat) is 1.7V at a gate-emitter voltage of 15V, providing efficient operation.
Operating temperature ranges from -40°C to 150°C, making it suitable for a variety of environmental conditions. The IKW50N60T is part of Infineon's IGBT product line, often utilized in power supplies, motor drives, and industrial automation.
This IGBT is designed for robust performance and reliability in demanding applications. Its through-hole mounting facilitates integration into circuit designs requiring robust connections.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.63 | $3.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 600V.
The maximum collector current is 80A.
The package type is TO-247.
The maximum operating temperature is 150°C.
The minimum operating temperature is -40°C.
The VCEsat is 1.7V at VGE=15V.
