| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22,333 pcs
|
22333 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
2,264 pcs
|
2264 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
26 pcs
|
26 pcs | On Request | 1 | On Request | On Request | NA | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| SVHC Present |
The Infineon IKW50N60H3 is a third-generation high-speed IGBT transistor utilizing TRENCHSTOP™ technology. This technology offers a very low VCEsat and low EMI, combined with a very soft, fast recovery anti-parallel diode.
Key electrical specifications include a 600V collector-emitter voltage and a continuous collector current of 50A at 100°C case temperature, with a pulsed collector current capability of 200A. The maximum junction temperature is rated at 175°C.
This IGBT is suitable for applications such as uninterruptible power supplies, welding converters, and converters operating at high switching frequencies. It comes in the PG-TO247-3 package, designed for through-hole mounting.
The component is Pb-free and RoHS compliant, with a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 600V at Tvj >= 25°C.
The IKW50N60H3 comes in a PG-TO247-3 through-hole package.
The maximum junction temperature is 175°C.
Typical VCEsat is 1.85V at Tvj=25°C.
At TC=100°C, the maximum DC collector current is 50A.
The maximum pulsed collector current is 200A, limited by junction temperature.
The diode forward current is maximum 50A at TC=25°C.