| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,068 pcs
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3068 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,589 pcs
|
1589 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
185 pcs
|
185 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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The Infineon IKW30N60H3 is a third-generation, high-speed switching IGBT transistor designed for demanding applications. It utilizes TRENCHSTOP™ technology, offering a very low VCEsat and fast recovery anti-parallel diode.
Key electrical specifications include a 600V collector-emitter voltage and a continuous collector current of 30A at 100°C case temperature, with a pulsed collector current capability of up to 120A. The maximum junction temperature is rated at 175°C.
This IGBT is suitable for applications such as uninterruptible power supplies, welding converters, and high-frequency converters. It comes in a PG-TO247-3 package suitable for through-hole mounting.
The device is Pb-free and RoHS compliant, with an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 600V.
The continuous collector current is 30A at 100°C case temperature and 60A at 25°C case temperature.
The maximum junction temperature is 175°C.
It is supplied in the PG-TO247-3 package.
Yes, it is RoHS3 Compliant.