RJE0618JSP
Renesas
The Renesas RJE0618JSP is a P Channel Thermal FET designed for power switching applications. It features built-in over-temperature shut-down and current limitation circuits.
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140 pcs
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140 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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The Infineon IDW100E60 is a high-performance emitter controlled diode with a repetitive peak reverse voltage rating of 600V. It is designed for applications requiring fast switching speeds and soft switching capabilities.
Key electrical characteristics include a continuous forward current of 150A at 25°C case temperature, and a typical forward voltage of 1.65V at 100A and 25°C junction temperature. The diode also exhibits a low reverse recovery charge and fast reverse recovery times, making it suitable for demanding power electronic circuits.
With an operating junction temperature range of -40°C to +175°C and a thermal resistance junction-to-case of 0.40 K/W, the IDW100E60 is built for robust performance. It is supplied in the PG-TO247-3 package, which is suitable for through-hole mounting.
This diode is ideal for applications such as welding and motor drives where efficient and reliable power switching is critical.
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| 1+ | $0.40 | $0.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IDW100E60 has a repetitive peak reverse voltage rating of 600V.
The maximum continuous forward current is 150A at TC=25°C, 104A at TC=90°C, and 96A at TC=100°C.
The typical forward voltage is 1.65V at IF=100A at both 25°C and 175°C junction temperatures; the maximum is 2.0V at 175°C.
The typical reverse recovery time is 120ns at Tj=25°C, 168ns at Tj=125°C, and 200ns at Tj=175°C under test conditions VR=400V, IF=100A, dIF/dt=1200A/µs.
The IDW100E60 is available in the PG-TO247-3 package.
The surge non-repetitive forward current is 400A for a 10ms sine half-wave at TC=25°C.
The operating junction temperature range is -40°C to +175°C.
