| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
176 pcs
|
176 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
150 pcs
|
150 pcs | On Request | 1 | On Request | On Request | 220 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| SVHC Present |
The Infineon IDH10G65C5 is a 5th Generation thinQ!™ Silicon Carbide (SiC) Schottky Barrier Diode. This diode utilizes revolutionary SiC material, providing benchmark switching behavior with no reverse or forward recovery and temperature-independent switching.
Key electrical specifications include a breakdown voltage of 650V and a nominal forward current of 10A at temperatures below 140°C. It also features a typical charge carrier charge of 15 nC and a typical energy per bit of 3.4 µJ at 400V reverse voltage.
The IDH10G65C5 is designed for applications requiring improved system efficiency and higher power density, such as switch mode power supplies, power factor correction, solar inverters, and uninterruptible power supplies. Its optimized design for high-temperature operation contributes to higher system reliability and reduced cooling requirements.
Packaged in a PG-TO220-2 case, this diode is suitable for through-hole mounting. The use of Pb-free lead plating makes it RoHS compliant.
The breakdown voltage is 650V.
The forward current rating is 10A at temperatures below 140°C.
The IDH10G65C5 is in a PG-TO220-2 package.
Silicon Carbide diodes offer system efficiency improvement, reduced cooling requirements, enabling higher frequency and increased power density solutions, higher system reliability, and reduced EMI.
It is suitable for switch mode power supplies, power factor correction, solar inverters, and uninterruptible power supplies.