| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The GTVA262701FA-V2-R2 is a 270W GaN HEMT RF transistor manufactured by Wolfspeed. It is designed for high-power RF applications in the 2.62 to 2.69 GHz frequency band. The device operates with a drain voltage of 48V and provides a gain of 17 dB.
This transistor utilizes HEMT (High Electron Mobility Transistor) technology, offering high efficiency and linearity for demanding RF power amplification. The drain current is rated at 320 mA.
The device is housed in a surface mount H-87265J-2 package, suitable for automated assembly. It is RoHS3 compliant and has an MSL of 1 (unlimited).
The surface mount package enables compact design in RF power amplifiers for wireless infrastructure applications such as base stations.
| Qty | Low | High |
|---|---|---|
| 1+ | $215.02 | $215.02 |
| 250+ | $85.80 | $85.80 |
| 500+ | $82.93 | $82.93 |
| 1,000+ | $81.51 | $81.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain voltage is 48V.
It comes in a surface mount H-87265J-2 package.
Yes, it is listed as RoHS3 compliant.
2.62 to 2.69 GHz.
17 dB.
270 W.
HEMT (High Electron Mobility Transistor).