Mfr Part #:

GT013N04TI

Name: GT013N04TI
Brand: Goford Semiconductor
SKU: GT013N04TI

Description:

N40V, 220A,RD<2.5M@10V,VTH2.0V~5

Stock on Request

GT013N04TI Description

Short technical summary and product information.

N40V, 220A,RD<2.5M@10V,VTH2.0V~5

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Goford Semiconductor
Current	220A (Tc)
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3986 pF @ 20 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	90W (Tc)
Rds On (Max) @ Id, Vgs	2.5mOhm @ 30A, 10V
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	5V @ 250µA