K4B4G1646E-BYK0
Samsung Electronics
The Samsung K4B4G1646E-BYK0 is a DRAM chip featuring DDR3L SDRAM technology. It offers a 4Gbit capacity and operates at 1.5V.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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770 pcs
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770 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| SVHC Present |
The Intel GE28F320C3BD70 is a memory integrated circuit designed for various electronic applications. This component adheres to RoHS3 standards, indicating compliance with restrictions on hazardous substances. It also has a REACH status of 'Unaffected' and a Moisture Sensitivity Level (MSL) of 1, signifying unlimited shelf life under standard conditions.
As a memory component, the GE28F320C3BD70 is suitable for data storage and retrieval in embedded systems and other electronic designs. Specific technical details such as memory size, access time, and operating voltage would be found in the manufacturer's datasheet.
This part is manufactured by Intel, a leading provider of semiconductor solutions. Further details regarding package type, mounting, and specific electrical characteristics are available upon request or through the official product documentation.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The GE28F320C3BD70 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.