| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
196 pcs
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196 pcs | On Request | 1 | On Request | On Request | 02+11 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Propagation Delay |
The Lattice Semiconductor GAL16V8A25QP is a high-performance E2CMOS PLD designed for speed and flexibility. It boasts a maximum propagation delay of 3.5 ns and an Fmax of 250 MHz, making it suitable for demanding applications.
This device utilizes Electrically Erasable (E2) floating gate technology, allowing for quick and efficient reprogramming with high-speed erase times under 100ms. The generic architecture provides design flexibility through user-configurable Output Logic Macrocells (OLMCs). The GAL16V8A25QP can emulate various PAL architectures with full functional, fuse map, and parametric compatibility.
Key features include ultra-low power consumption compared to bipolar devices, active pull-ups on all pins, and reprogrammable cells ensuring 100% tested yields. It offers 100 erase/write cycles and a data retention exceeding 20 years. The GAL16V8A25QP is packaged in a DIP-20 format.
Applications include DMA control, state machine control, high-speed graphics processing, and as a standard logic speed upgrade.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.50 | $0.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum propagation delay is 3.5 ns.
The maximum operating frequency (Fmax) is 250 MHz.
The GAL16V8A25QP uses a DIP-20 package.
Data retention is specified to be in excess of 20 years.
The device supports 100 erase/write cycles.
The GAL16V8A25QP features eight output logic macrocells.