| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
85,000 pcs
|
85000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The G08P06D3 is a P-Channel enhancement mode MOSFET manufactured by Goford Semiconductor. It is designed for medium-power switching applications requiring a negative gate drive. The device offers a maximum drain-source voltage of 60V and a continuous drain current rating of 8A. With a maximum on-resistance of 52mOhm at Vgs=-10V and Id=6A, it provides efficient power handling with low conduction losses. The gate threshold voltage is specified between -2V and -3.5V at Id=250µA, ensuring reliable turn-on characteristics. The MOSFET features a total gate charge of 25nC at Vgs=-10V and an input capacitance of 2972pF at Vds=30V, making it suitable for moderate frequency switching. The device is housed in a compact 8-DFN (3.15x3.05mm) surface mount package, ideal for space-constrained designs. It is rated for operation over a junction temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 5,000+ | $0.21 | $0.21 |
| 15,000+ | $0.20 | $0.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 60V.
The continuous drain current (Id) is 8A.
The maximum on-resistance (Rds(on)) is 52mOhm at Vgs=-10V and Id=6A.
The G08P06D3 is housed in an 8-DFN (3.15x3.05mm) surface mount package.
The operating junction temperature range is -55°C to +150°C.
The maximum gate threshold voltage (Vgs(th)) is 3.5V at Id=250µA.
The maximum total gate charge (Qg) is 25nC at Vgs=-10V.