| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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885 pcs
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885 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Transistor Type |
The FZTA42TA from Diodes Incorporated is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a surface-mount SOT-223-3 package, also known as TO-261-4 or TO-261AA.
Key electrical characteristics include a maximum collector-emitter breakdown voltage of 300V and a maximum continuous collector current of 500mA. The transistor offers a maximum power dissipation of 2W and a transition frequency of 50MHz. Its DC current gain (hFE) is a minimum of 40 at 30mA and 10V, with a Vce saturation of 500mV maximum at 2mA/20mA.
The operating temperature range for the FZTA42TA is from -55°C to 150°C. The component is supplied in tape and reel packaging, making it suitable for automated assembly processes. This transistor is a reliable choice for applications requiring moderate voltage and current handling capabilities in a compact surface-mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage (Vce) is 300V.
It is available in a TO-261-4 (TO-261AA) surface mount package.
The operating temperature range is -55°C to 150°C.
The maximum collector current is 500mA.
The maximum power dissipation is 2W.
The typical transition frequency is 50MHz.
The minimum DC current gain (hFE) is 40 at 30mA collector current and 10V Vce.
