| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
54,421 pcs
|
54421 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Supplier Device Package | |
| Transistor Type |
The NSVBC847BTT1G from onsemi is a general-purpose NPN bipolar junction transistor (BJT) suitable for various electronic applications. It features a collector-emitter breakdown voltage of 45V and can handle a maximum collector current of 100mA.
This transistor operates with a maximum power dissipation of 200mW and has a transition frequency of 100MHz, making it suitable for moderate-frequency signal amplification and switching tasks. The Vce saturation voltage is specified at a maximum of 600mV at 5mA base current and 100mA collector current.
Packaged in an SC-75, SOT-416 surface mount case, the NSVBC847BTT1G is designed for automated assembly processes. It operates within a temperature range of -55°C to 150°C (TJ), ensuring reliability in diverse environmental conditions. The RoHS status is listed as RoHS3 Compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 45V.
The device is housed in a surface-mount SC-75 (SOT-416) package.
The operating junction temperature range is -55°C to 150°C.
The maximum collector current is 100mA.
The minimum DC current gain is 200 at a collector current of 2mA and collector-emitter voltage of 5V.
The transition frequency is 100MHz.
The maximum power dissipation is 200mW.