| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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714 pcs
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714 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Power Dissipation |
The FZT651 is a high-performance NPN silicon planar transistor housed in a SOT-223 package. It is designed for applications requiring robust performance with a 60 Volt collector-emitter voltage (VCEO) and a continuous collector current of up to 3 Amps.
Key electrical characteristics include a low collector-emitter saturation voltage (VCE(sat)) of 0.43V typical at 1A and 0.6V typical at 3A, ensuring efficient power handling. The static forward current transfer ratio (hFE) ranges from 70 to 300 depending on the collector current. Its transition frequency (fT) is typically 175 MHz at 100mA and 5V.
This transistor is suitable for various switching and amplification applications where reliability and performance are critical. The SOT-223 package is designed for surface mounting, facilitating automated assembly processes.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the FZT651 is 60V.
The FZT651 has a continuous collector current rating of 3A.
The typical collector-emitter saturation voltage (VCE(sat)) for the FZT651 at 1A is 0.43V.
The FZT651 transistor operates within a temperature range of -55°C to +150°C.
The FZT651 is available in the SOT-223 package.