| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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452,000 pcs
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452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,564 pcs
|
1564 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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The FDS8928A-NL is a versatile Dual N-Channel and P-Channel MOSFET manufactured by On Semiconductor. This component is designed for enhancement mode operation and offers a 30V drain-to-source voltage for the N-channel and 20V for the P-channel. It can handle a continuous drain current of 5.5A for the N-channel and 4A for the P-channel, with a low on-resistance of 0.025 Ohms.
The MOSFET operates within a temperature range of -55℃ to 150℃, with a maximum junction temperature of 150℃. It has a gate threshold voltage of 670mV and a breakdown voltage of 30V. The input capacitance is rated at 900pF at 10V Vds for Ciss, and a general input capacitance of 1.13nF. Gate charge is 20.0nC, and gate-to-source breakdown voltage is ±8.00V.
Packaged in an 8-pin SOIC surface mount case, the FDS8928A-NL is suitable for various electronic applications requiring efficient switching and power management. Its robust design and specifications make it a reliable choice for engineers designing complex circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The N-Channel MOSFET has a drain-to-source voltage of 30V, and the P-Channel MOSFET has a drain-to-source voltage of 20V.
The FDS8928A-NL is available in an SOIC-8 surface mount package.
The operating temperature range is -55°C to 150°C.
The N-Channel is rated for 5.5A continuous drain current, and the P-Channel is rated for 4A.
The power dissipation is 2W.
The gate threshold voltage is 670mV.
The input capacitance is 900pF at 10V Vds.