TK25A60X,S5X(M
Toshiba
The Toshiba TK25A60X,S5X(M is an N-channel MOSFET designed for switching regulator applications. It features a 600V drain-source voltage and a 25A drain current.
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745 pcs
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745 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Fairchild Semiconductor FQP13N10 is an N-Channel enhancement mode power MOSFET designed using proprietary planar stripe, DMOS technology. This technology minimizes on-state resistance and provides superior switching performance. It is rated for a 100V breakdown voltage and a continuous current of 12.8A.
The MOSFET has an on-resistance (RDS(on)) of 180mΩ maximum and a gate threshold voltage of 4V. It includes specifications for input capacitance (450pF), rise time (55ns), and fall time (25ns). The device can dissipate up to 65W of power and operates within a temperature range of -55°C to 175°C.
Packaged in a TO-220-3 configuration, the FQP13N10 is designed for through-hole mounting. Its advanced technology allows it to withstand high energy pulses in avalanche and commutation modes, making it suitable for various power switching applications.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
TO-220-3 through-hole package.
-55°C to 175°C.
12.8A.
180mΩ.
4V.
65W.