| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30 pcs
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30 pcs | On Request | 1 | On Request | On Request | 12+P/ | On Request | On Request |
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The FQD6P25 is a P-Channel enhancement mode power MOSFET manufactured by ON Semiconductor using their proprietary planar stripe, DMOS technology. This advanced technology is designed to minimize on-state resistance and provide superior switching performance, making it well-suited for high-efficiency switching DC/DC converters.
Key electrical specifications include a drain-source breakdown voltage of -250V and a continuous drain current of -4.7A at 25°C. The on-state resistance (Rds(on)) is 1.1Ω at a gate-source voltage of -10V. It also features a low gate charge of typically 21 nC and low reverse transfer capacitance (Crss) of typically 20 pF, contributing to its fast switching capabilities.
The device is 100% avalanche tested and offers improved dv/dt capability. It operates within a temperature range of -55°C to +150°C. The FQD6P25 is available in I-PAK and D-PAK surface mount packages.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FQD6P25 has a drain-source breakdown voltage of -250V (minimum) and a gate-source voltage rating of ±30V (maximum).
The FQD6P25 is available in I-PAK / D-PAK surface mount packages.
The operating and storage temperature range is -55°C to +150°C.
The maximum continuous drain current is -4.7A at TC=25°C and -3A at TC=100°C. Pulsed drain current can reach -18.8A.
The maximum power dissipation is 55W at case temperature 25°C and 2.5W at ambient temperature 25°C when mounted on minimum pad.
The typical on-state resistance is 1.1Ω at VGS = -10V.
