| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,350 pcs
|
13350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The AOS AON6435 is a 30V P-Channel MOSFET utilizing advanced trench technology for low on-resistance. It is suitable for load switch and battery protection applications.
Key electrical characteristics include a maximum Drain-Source Voltage (VDS) of -30V and a Gate-Source Voltage (VGS) of ±25V. The Static Drain-Source On-Resistance (RDS(ON)) is a maximum of 17mΩ at VGS = -10V and 15A, and 34mΩ at VGS = -4.5V and 15A. Continuous drain current (ID) is rated at -34A at 25°C.
Thermal performance is supported by a maximum junction-to-case thermal resistance (RθJC) of 3.4°C/W. The device operates within a junction temperature range of -55°C to 150°C. It is supplied in a DFN5x6-8L surface-mount package.
This MOSFET is qualified for industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the AON6435 is -30V.
The typical gate threshold voltage (VGS(th)) for the AON6435 is -2.3V.
The maximum on-resistance (RDS(ON)) of the AON6435 at VGS = -10V is 17mΩ.
The continuous drain current (ID) rating for the AON6435 at 25°C is -34A.
The AON6435 MOSFET is supplied in a DFN5x6-8L package.
The AON6435 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the AON6435 is 1 Unlimited.